TB0640H thru tb4000h features oxide glass passivated junction bidirectional protection in a single device surge capabilities up to 100a @ 10/1000us or 400 @ 8/20us high off state impedance and low on state voltage plastic material has ul flammability classification 94v-0 mechanical data case : molded plastic polarity : denotes none cathode band weight : 0.003 ounces, 0.093 grams surface mount thyristor surge protective device vdrm - 58 to 360 volts ipp - 100 amperes maximum ratings maximum rated surge waveform waveform thermal resistance /w unit symbol %/ junction to leads characteristics typical positive temperature coefficient for brekdo wn voltage rth (j-l) v br / t j 0.1 value 20 100 junction to ambient on print circuit (on recommende d pad layout) rth (j-a) /w 2/10 us 8/20 us 10/160 us 10/560 us 10/700 us 10/1000 us standard gr-1089-core iec 61000-4-5 fcc part 68 fcc part 68 itu-t k20/k21 gr-1089-core i pp (a) 500 400 250 200 160 100 i pp , peak pulse current (%) 100 50 0 tr tp time half value peak value (ipp) tr= rise time to peak value tp= decay time to half value bi-directional unit symbol non-repetitive peak impulse current @ 10/1000us characteristics storage temperature range i pp i tsm t stg aa -55 to +150 value 100 50 non-repetitive peak on-state current @ 8.3ms (one h alf cycle) junction temperature range t j -40 to +150 rev. 5, oct-2010, kswb04 smb all dimensions in millimeter smb dim. min. max. a c d e f g h b 4.06 4.57 3.94 3.30 1.96 2.21 0.31 0.15 5.21 5.59 0.05 0.20 2.01 2.62 0.76 1.52 c b a h e f g d semiconductor lite-on
symbol v drm i drm v br i br v bo i bo parameter stand-off voltage leakage current at stand-off voltage breakdown voltage breakdown current breakover voltage holding current note: 1 i h v t i pp c o on state voltage peak pulse current off state capacitance note: 2 breakover current v drm i drm v br i br v bo i bo i h v t i pp v i notes: 1. i h > (v l /r l ) if this criterion is not obeyed, the t spd triggers but does not return correctly to high-resi stance state. the surge recovery time does not exceed 30ms. 2. off-state capacitance measured at f=1.0mhz; 1.0v rms signal; vr=2v dc bias. electrical characteristics @ t a= 25 unless otherwise specified TB0640H thru tb4000h TB0640H tb0720h 75 58 65 tb0900h tb1100h tb1300h tb1500h tb1800h tb2300h tb2600h tb3100h tb3500h 140 90 120 220 170 190 275 320 5 55 5 55 5 55 5 5 98 77 88 180 130 160 300 220 265 350 400 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 150 150 150 150 150 150 150 150 150 150 150 200 200 200 120 120 120 80 120 80 80 60 50 50 50 50 50 50 50 50 50 50 50 max parameter symbol units limit rated repetitive off-state voltage off-state leakage current @ v drm breakover voltage on-state voltage @ i t =1.0a holding current off-state capacitance max max max min max min typ v drm i drm v bo v t i bo i h co volts ua volts volts ma ma pf breakover current 800 800 800 800 800 800 800 800 800 800 800 max 800 800 800 800 800 800 800 800 800 800 800 tb4000h 360 5 450 3.5 80 50 800 800 150 80
fig.1 - off state current vs junction temperature i( drm) , off state current (ua) t j , junction temperature ( ) v drm =50v 100 10 1.0 0.1 0.001 0.01 -25 0 25 50 75 100 125 150 t j , junction temperature ( ) -50 -25 0 25 50 75 125 150 normalized breakdown voltage 1.20 1.10 1.05 1.0 0.90 0.95 1.15 v br (t j ) v br (t j =25 ) 100 175 fig. 2 - relative variation of breakdown voltage vs junction temperature t j , junction temperature ( ) -50 -25 0 25 50 75 125 150 normalized breakover voltage 1.10 1.05 1.0 0.95 100 175 fig. 3 - relative variation of breakover voltage vs junction temperature 1.0 1.5 2.0 2.5 3.0 3.5 4.5 4.0 5.0 v (t); on state voltage i (t) , on state current fig. 4 - on state current vs on state voltage 1.0 10 100 t j =25 t j , junction temperature ( ) normalized holding current fig. 5 - relative variation of holding current vs junction temperature vr, reverse voltage normalize capacitance fig. 6 - relative variation of junction capacitance vs reverse voltage bias rating and characteristics curves TB0640H thru tb4000h -50 -25 0 25 50 75 100 125 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1 10 100 0.1 1 tj =25 f=1mhz v rms = 1v c o (vr) c o (vr = 1v) ih (t j ) ih (t j =25 ) v bo (t j ) v bo (t j =25 )
the ptc (positive temperature coefficient) is an ov ercurrent protection device telecom equipment e.g. modem fuse tspd 1 ring tip telecom equipment e.g. line card ring tip tspd 2 tspd 3 ptc ptc tspd 1 telecom equipment e.g. isdn tspd 1 ring tip tspd 2 ptc ptc typical circuit applications TB0640H thru tb4000h
legal disclaimer notice TB0640H thru tb4000h lsc reserves the right to make changes to this docu ment and its products and specifications at any time without notice. custome rs should obtain and confirm the latest product information and specifications b efore final design, purchase or use. lsc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does l sc assume any liability for application assistance or customer product design. lsc does not warrant or accept any liability with products which are purcha sed or used for any unintended or unauthorized application. no license is granted by implication or otherwise u nder any intellectual property rights of lsc. lsc products are not authorized for use as critical components in life support devices or systems without express written approval of lsc. important notice and disclaimer
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